A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor
نویسندگان
چکیده
منابع مشابه
A disorder induced field effect transistor in bilayer and trilayer graphene.
We propose using disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the effects of disorder are confined to only one of the graphene layers. This effect is based on the ability of the bias voltage to select which of the graphene layers carries current, and is not tied to...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2009
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2009.2033419